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Si1046X
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
20
20.5
- 2.12
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.35
0.95
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 85 °C
V DS = ≥ 5 V, V GS = 4.5 V
V GS = 4.5 V, I D = 0.606 A
2.5
0.336
± 30
1
10
0.420
mA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = 2.5 V, I D = 0.505 A
0.395
0.501
Ω
V GS = 1.8 V, I D = 0.150 A
0.438
0.660
Forward Transconductance
g fs
V DS = 10 V, I D = 0.606 A
2.1
S
Dynamic b
Input Capacitance
C iss
66
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 10 V, V GS = 0 V, f = 1 MHz
17
7
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 10 V, V GS = 5 V, I D = 0.606 A
V DS = 10 V, V GS = 4.5 V, I D = 0.606 A
0.99
0.92
0.15
1.49
1.38
nC
Gate-Drain Charge
Q gd
0.30
Gate Resistance
Turn-On Delay Time
R g
t d(on)
f = 1 MHz
212
17
26
Ω
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 10 V, R L = 20.8 Ω
I D ? 0.48 A, V GEN = 4.5 V, R g = 1 Ω
19
76
27
28.5
114
41
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current a
I SM
2.5
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 0.48 A
I F = 1.0 A, dI/dt = 100 A/μs
0.8
16
4.8
12.3
3.7
1.2
24
7.2
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74594
S09-1225-Rev. C, 29-Jun-09
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